Microchip MCP1640 Bedienungsanleitung
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MCP1640
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2010-2021
Microchip Technology Inc. and its subsidiaries
DS20002234E-page 1
MCP1640/B/C/D
Features
• AEC-Q100 Qualified
• Up to 96% Typical Efficiency
• Passes automotive AEC-Q100 reliability testing
• 800 mA Typical Peak Input Current Limit:
- IOUT > 100 mA @ 1.2V VIN, 3.3V VOUT
- IOUT > 350 mA @ 2.4V VIN, 3.3V VOUT
- IOUT > 350 mA @ 3.3V VIN, 5.0V VOUT
• Low Start-Up Voltage: 0.65V, typical 3.3V VOUT
@ 1 mA
• Low Operating Input Voltage: 0.35V, typical 3.3V
VOUT @ 1 mA
• Adjustable Output Voltage Range: 2.0V to 5.5V
• Maximum Input Voltage VOUT < 5.5V
• Automatic PFM/PWM Operation (MCP1640/C):
- PFM Operation Disabled (MCP1640B/D)
- PWM Operation: 500 kHz
• Low Device Quiescent Current: 19 µA, typical
PFM Mode (not switching)
• Internal Synchronous Rectifier
• Internal Compensation
• Inrush Current Limiting and Internal Soft Start
• Selectable, Logic Controlled Shutdown States:
- True Load Disconnect Option (MCP1640/B)
- Input to Output Bypass Option (MCP1640C/D)
• Shutdown Current (All States): < 1 µA
• Low Noise, Anti-Ringing Control
• Overtemperature Protection
• Available Packages:
- 6-Lead SOT-23
- 8-Lead 2 mm x 3 mm DFN
Applications
• One, Two and Three Cell Alkaline and NiMH/NiCd
Portable Products
• Single-Cell Li-Ion to 5V Converters
• Li Coin Cell Powered Devices
• Personal Medical Products
• Wireless Sensors
• Handheld Instruments
• GPS Receivers
• Bluetooth Headsets
• +3.3V to +5.0V Distributed Power Supply
General Description
The MCP1640/B/C/D is a compact, high-efficiency,
fixed frequency, synchronous step-up DC-DC
converter. It provides an easy-to-use power supply
solution for applications powered by either single-cell,
two-cell, or three-cell alkaline, NiCd, NiMH, and single-
cell Li-Ion or Li-Polymer batteries.
Low-voltage technology allows the regulator to start-up
without high inrush current or output voltage overshoot
from a low 0.65V input. High efficiency is accomplished
by integrating the low resistance N-Channel Boost
switch and synchronous P-Channel switch. All
compensation and protection circuitry is integrated to
minimize the number of external components. For
standby applications, the MCP1640 consumes only
19 µA while operating at no load, and provides a true
disconnect from input to output while in Shutdown
(EN = GND). Additional device options are available by
operating in PWM-Only mode and connecting input to
output while the device is in Shutdown.
The “true” load disconnect mode provides input-to-out-
put isolation while the device is disabled by removing
the normal boost regulator diode path from input-to-
output. The Input-to-Output Bypass mode option con-
nects the input to the output using the integrated low
resistance P-Channel MOSFET, which provides a low
bias voltage for circuits operating in Deep Sleep mode.
Both options consume less than 1 µA of input current.
Output voltage is set by a small external resistor
divider. Two package options are available, 6-Lead
SOT-23 and 8-Lead 2 mm x 3 mm DFN. The
MCP1640/B/C/D is AEC-Q100 qualified for automotive
applications.
Package Types
MCP1640
8-Lead 2 x 3 DFN*
PGND
SGND
EN
VOUTS
VOUTP
1
2
3
4
8
7
6
5SW
VIN
VFB
EP
9
4
1
2
3
6VIN
VFB
SW
GND
EN
5VOUT
MCP1640
6-Lead SOT-23
* Includes Exposed Thermal Pad (EP); see Table 3-1.
0.65V Start-Up Synchronous Boost Regulator
with True Output Disconnect or Input/Output Bypass Option
MCP1640/B/C/D
DS20002234E-page 2 2010-2021
Microchip Technology Inc. and its subsidiaries
Typical Application
VIN
GND
VFB
SW
VIN
0.9V to 1.7V
VOUT
3.3V @ 100 mA
COUT
10 µF
CIN
4.7 µF
L1
4.7 µH
VOUT
+
-
976 k
562 k
ALKALINE
VIN
PGND
VFB
SW
VIN
3.0V to 4.2V
VOUT
5.0V @ 300 mA
COUT
10 µF
CIN
4.7 µF
L1
4.7 µH
VOUTS
+
-
976 k
309 k
VOUTP
SGND
LI-ION
EN
EN
2010-2021
Microchip Technology Inc. and its subsidiaries
DS20002234E-page 3
MCP1640/B/C/D
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
EN, VFB, VIN, VSW, VOUT - GND .........................+6.5V
EN, VFB ....<maximum of VOUT or VIN > (GND – 0.3V)
Output Short-Circuit Current ...................... Continuous
Output Current Bypass Mode .......................... 400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature ......................... -65°C to +150°C
Ambient Temp. with Power Applied...... -40°C to +85°C
Operating Junction Temperature........ -40°C to +125°C
ESD Protection On All Pins:
HBM........................................................ 3 kV
MM......................................................... 300V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT = 3.3V,
IOUT = 15 mA, TA = +25°C. Boldface specifications apply over the T
A range of -40°C to +85°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Input Characteristics
Minimum Start-Up Voltage VIN — 0.65 0.8 VNote 1
Minimum Input Voltage After
Start-Up
VIN — 0.35 — V Note 1
Output Voltage Adjust Range VOUT 2.0 5.5 V VOUT VIN; Note 2
Maximum Output Current IOUT — 150 — mA 1.2V VIN, 2.0V VOUT
— 150 — mA 1.5V VIN, 3.3V VOUT
— 350 — mA 3.3V VIN, 5.0V VOUT
Feedback Voltage VFB 1.175 1.2451.21 V
Feedback Input Bias Current I
VFB — 10 — pA
Quiescent Current – PFM
Mode
IQPFM — 19 30 µA Measured at VOUT = 4.0V;
EN = VIN, IOUT
= 0 mA;
Note 3
Quiescent Current – PWM
Mode
IQPWM — 220 — µA Measured at VOUT = 4.0V;
EN = VIN, IOUT = 0 mA;
Note 3
Quiescent Current – Shutdown IQSHDN — 0.7 2.3 µA VOUT = EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
NMOS Switch Leakage I
NLK — 0.3 — µA VIN = VSW = 5V;
VOUT = 5.5V
VEN = VFB = GND
PMOS Switch Leakage IPLK — 0.05 — µA VIN = VSW = GND;
VOUT = 5.5V
Note 1: 3.3 k resistive load, 3.3V VOUT (1 mA).
2: For V
IN > VOUT, VOUT will not remain in regulation.
3: IQOUT is measured at VOUT
; VOUT is externally supplied with a voltage higher than the nominal 3.3V output
(device is not switching); no load; VIN quiescent current will vary with boost ratio. VIN quiescent current
can be estimated by: (IQPFM
* (V OUT/VIN)), (IQPWM * (VOUT/VIN)).
4: Peak current limit determined by characterization, not production tested.
5: 220 resistive load, 3.3V VOUT (15 mA).
Produktspezifikationen
| Marke: | Microchip |
| Kategorie: | Nicht kategorisiert |
| Modell: | MCP1640 |
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