Texas Instruments ADC12L066 Bedienungsanleitung

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ADC12L066

www.ti.com

SNAS153I–NOVEMBER2001–REVISEDMARCH2013

ADC12L06612-Bit,66MSPS,450MHzBandwidthA/DConverterwithInternalSample-and-

Hold

CheckforSamples:ADC12L066

1

FEATURES

DESCRIPTION

TheADC12L066isamonolithicCMOSanalog-to-

23

•SingleSupplyOperation

digitalconvertercapableofconvertinganaloginput

•LowPowerConsumption

signalsinto12-bitdigitalwordsat66Megasamples

•PowerDownMode

persecond(Msps),minimum,withtypicaloperation

possibleupto80Msps.Thisconverterusesa

•On-ChipReferenceBuffer

differential,pipelinearchitecturewithdigitalerror

correctionandanon-chipsample-and-holdcircuitto

APPLICATIONS

minimizediesizeandpowerconsumptionwhile

•UltrasoundandImaging

providingexcellentdynamicperformance.Aunique

sample-and-holdstageyieldsafull-powerbandwidth

•Instrumentation

of450MHz.Operatingonasingle3.3Vpower

•CellularBaseStations/Communications

supply,thisdeviceconsumesjust357mWat66

Receivers

Msps,includingthereferencecurrent.ThePower

•Sonar/Radar

Downfeaturereducespowerconsumptiontojust50

mW.

•xDSL

•WirelessLocalLoops

Thedifferentialinputsprovideafullscaleinputswing

equalto±V

REF

withthepossibilityofasingle-ended

•DataAcquisitionSystems

input.Fulluseofthedifferentialinputis

•DSPFrontEnds

recommendedforoptimumperformance.Foreaseof

use,thebuffered,highimpedance,single-ended

KEYSPECIFICATIONS

referenceinputisconvertedon-chiptoadifferential

referenceforusebytheprocessingcircuitry.Output

•Resolution:12Bits

dataformatis12-bitoffsetbinary.

•ConversionRate:66Msps

Thisdeviceisavailableinthe32-leadLQFPpackage

•FullPowerBandwidth:450MHz

andwilloperateovertheindustrialtemperaturerange

•DNL:±0.4LSB(typ)

of−40°Cto+85°C.Anevaluationboardisavailable

•SNR(fIN=10MHz):66dB(typ)

tofacilitatetheevaluationprocess.

•SFDR(fIN=10MHz):80dB(typ)

•DataLatency:6ClockCycles

•SupplyVoltage:+3.3V±300mV

•PowerConsumption,66MHz:357mW(typ)

Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam

duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.

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Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof

TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.

2TRI-STATEisaregisteredtrademarkofNationalSemiconductorCorporation.

3Allothertrademarksarethepropertyoftheirrespectiveowners.

PRODUCTIONDATAinformationiscurrentasofpublicationdate.

Copyright©2001–2013,TexasInstrumentsIncorporated

ProductsconformtospecificationsperthetermsoftheTexas

Instrumentsstandardwarranty.Productionprocessingdoesnot

necessarilyincludetestingofallparameters.

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