Texas Instruments CSD17307Q5A Bedienungsanleitung

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1

D

2

D

3

D

4

D

D

5

G

6S

7

S

8S

P0093-01

V

GS

- Gate-to-Source Voltage - V

R

DS(on)

- On-State Resistance - mΩ

012345678910

0

5

10

15

20

25

30

T

C

= 25°C

T

C

= 125°C

G006

I

D

= 11A

Q

g

- Gate Charge - nC

V

GS

- Gate-to-Source Voltage - V

01234567

0

1

2

3

4

5

6

7

8

G003

I

D

= 11A

V

DS

= 15V

CSD17307Q5A

www.ti.com

SLPS252A–FEBRUARY2010–REVISEDJULY2010

30V,N-ChannelNexFET™PowerMOSFETs

CheckforSamples:CSD17307Q5A

1

FEATURES

PRODUCTSUMMARY

2

•Optimizedfor5VGateDrive

V

DS

DraintoSourceVoltage30V

•UltralowQ

g

andQ

gd

Q

g

GateChargeTotal(4.5V)4nC

•LowThermalResistance

Q

gd

GateChargeGatetoDrain1nC

•AvalancheRated

V

GS

=3V12.8mΩ

R

DS(on)

DraintoSourceOnResistanceV

GS

=4.5V9.7mΩ

•PbFreeTerminalPlating

V

GS

=8V8.4mΩ

•RoHSCompliant

V

GS(th)

ThresholdVoltage1.3V

•HalogenFree

•SON5-mm×6-mmPlasticPackage

ORDERINGINFORMATION

DevicePackageMediaQtyShip

APPLICATIONS

SON5-mm×6-mm13-InchTapeand

CSD17307Q5A2500

•NotebookPointofLoad

PlasticPackageReelReel

•Point-of-LoadSynchronousBuckin

Networking,TelecomandComputingSystems

ABSOLUTEMAXIMUMRATINGS

T

A

=25°CunlessotherwisestatedVALUEUNIT

DESCRIPTION

V

DS

DraintoSourceVoltage30V

V

GS

GatetoSourceVoltage+10/–8V

TheNexFET™powerMOSFEThasbeendesigned

ContinuousDrainCurrent,T

C

=25°C73A

tominimizelossesinpowerconversionapplications,

I

D

andoptimizedfor5Vgatedriveapplications.ContinuousDrainCurrent

(1)

14A

I

DM

PulsedDrainCurrent,T

A

=25°C

(2)

92A

TopView

P

D

PowerDissipation

(1)

3W

T

J

,OperatingJunctionandStorage

–55to150°C

T

STG

TemperatureRange

AvalancheEnergy,SinglePulse

E

AS

54mJ

I

D

=33A,L=0.1mH,R

G

=25Ω

(1)TypicalR

qJA

=41°C/Wona1-inch

2

(6.45-cm

2

),

2-oz.(0.071-mmthick)Cupadona0.06-inch(1.52-mm)thick

FR4PCB.

(2)Pulseduration≤300ms,dutycycle≤2%

R

DS(on)

vsV

GS

GATECHARGE

1

Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas

Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.

2NexFETisatrademarkofTexasInstruments.

PRODUCTIONDATAinformationiscurrentasofpublicationdate.

Copyright©2010,TexasInstrumentsIncorporated

ProductsconformtospecificationsperthetermsoftheTexas

Instrumentsstandardwarranty.Productionprocessingdoesnot

necessarilyincludetestingofallparameters.

Produktspezifikationen