Texas Instruments CSD22204W Bedienungsanleitung

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-V

GS

- Gate-To-Source Voltage (V)

R

DS(on)

- On-State Resistance (m:)

0.511.522.533.544.555.56

0

4

8

12

16

20

24

28

32

D007

T

C

= 25° C, I

D

= -2 A

T

C

= 125° C, I

D

= -2 A

Q

g

- Gate Charge (nC)

-V

GS

- Gate-to-Source Voltage (V)

02468101214161820

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

D004

I

D

= -2 A

V

DS

= -4 V

GSS

SSS

DDD

Gate

Source

Drain

Product

Folder

Sample &

Buy

Technical

Documents

Tools &

Software

Support &

Community

CSD22204W

SLPS559–MARCH2015

CSD22204W–8VP-ChannelNexFET™PowerMOSFET

1Features

ProductSummary

1

•LowResistance

T

A

=25°CTYPICALVALUEUNIT

•SmallFootprint1.5mm×1.5mm

V

DS

Drain-to-SourceVoltage–8V

•PbFree

Q

g

GateChargeTotal(–4.5V)18.9nC

Q

gd

GateChargeGate-to-Drain4.2nC

•GateESDProtection

V

GS

=–2.5V11.5mΩ

•RoHSCompliant

R

DS(on)

Drain-to-SourceOn-Resistance

V

GS

=–4.5V8.2mΩ

•HalogenFree

V

GS(th)

ThresholdVoltage–0.7V

•Gate-SourceVoltageClamp

OrderingInformation

(1)

2Applications

DeviceQtyMediaPackageShip

•BatteryManagement

CSD22204W30007-InchReel1.5mm×1.5mm

Tapeand

WaferBGA

•BatteryProtection

Reel

CSD22204WT2507-InchReel

Package

•LoadSwitchApplications

(1)Forallavailablepackages,seetheorderableaddendumat

theendofthedatasheet.

3Description

This–8V,8.2mΩ,1.5mm×1.5mmdeviceis

.

AbsoluteMaximumRatings

designedtodeliverthelowestonresistanceandgate

chargeinthesmallestoutlinepossiblewithexcellent

T

A

=25°CVALUEUNIT

thermalcharacteristicsinanultralowprofile.Lowon-

V

DS

Drain-to-SourceVoltage–8V

resistancecoupledwiththesmallfootprintandlow

V

GS

Gate-to-SourceVoltage–6V

profilemakethedeviceidealforbatteryoperated

ContinuousDrainCurrent

(1)

–5A

I

D

spaceconstrainedapplications.

PulsedDrainCurrent

(2)

–80A

P

D

PowerDissipation1.7W

TopViewandCircuitConfiguration

T

J

,OperatingJunctionand

–55to150°C

T

stg

StorageTemperatureRange

(1)Deviceoperatingatatemperatureof105ºC.

(2)TypR

θJA

=75°C/W,Pulsewidth≤100μs,dutycycle≤1%.

R

DS(on)

vsV

GS

GateCharge

1

AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,

intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

Produktspezifikationen