Microchip MCP1661 Bedienungsanleitung
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MCP1661
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2014-2015 Microchip Technology Inc. DS20005315B-page 1
MCP1661
Features
• 36V, 800 m Integrated Switch
• Up to 92% Efficiency
• High Output Voltage Range: up to 32V
• 1.3A Peak Input Current Limit:
- IOUT > 200 mA @ 5.0V VIN, 12V VOUT
- IOUT > 125 mA @ 3.3V VIN, 12V VOUT
- IOUT > 100 mA @ 4.2V VIN, 24V VOUT
• Input Voltage Range: 2.4V to 5.5V
• Undervoltage Lockout (UVLO):
- UVLO @ VIN Rising: 2.3V, typical
- UVLO @ VIN Falling: 1.85V, typical
• No Load Input Current: 250 µA, typical
• Sleep mode with 200 nA Typical Quiescent
Current
• PWM Operation with Skip mode: 500 kHz
• Feedback Voltage Reference: VFB = 1.227V
• Cycle-by-Cycle Current Limiting
• Internal Compensation
• Inrush Current Limiting and Internal Soft Start
• Output Overvoltage Protection (OVP) in the event
of:
- Feedback pin shorted to GND
- Disconnected feedback divider
• Overtemperature Protection
• Easily Configurable for SEPIC or Flyback
Topologies
• Available Packages:
- 5-Lead SOT-23
- 8-Lead 2x3 TDFN
Applications
• Two and Three-Cell Alkaline, Lithium Ultimate and
NiMH/NiCd Portable Products
• Single-Cell Li-Ion to 5V, 12V or 24V Converters
• LCD Bias Supply for Portable Applications
• Camera Phone Flash
• Portable Medical Equipment
• Hand-Held Instruments
• Single-Cell Li-Ion to 3.0V or 3.3V SEPIC
Applications (see Figure 6-3)
General Description
The MCP1661 device is a compact, high-efficiency,
fixed-frequency, non-synchronous step-up DC-DC
converter which integrates a 36V, 800 m NMOS
switch. It provides a space-efficient high-voltage
step-up power supply solution for applications powered
by either two-cell or three-cell alkaline, Ultimate Lithium,
NiCd, NiMH, one-cell Li-Ion or Li-Polymer batteries.
The integrated switch is protected by the 1.3A
cycle-by-cycle inductor peak current limit operation.
There is an output overvoltage protection which turns
off switching in case the feedback resistors are
accidentally disconnected or the feedback pin is
short-circuited to GND.
Low-voltage technology allows the regulator to start-up
without high inrush current or output voltage overshoot
from a low-voltage input. The device features a UVLO
which avoids start-up and operation with low inputs or
discharged batteries for two cell-powered applications.
For standby applications (EN = GND), the device stops
switching, enters Sleep mode and consumes 200 nA
(typical) of input current.
MCP1661 is easy to use and allows creating classic
boost, SEPIC or flyback DC-DC converters within a
small Printed Circuit Board (PCB) area. All
compensation and protection circuitry is integrated to
minimize the number of external components. Ceramic
input and output capacitors are used.
Package Types
* Includes Exposed Thermal Pad (EP); see Table 3-1.
SW
EN
VIN
GND
MCP1661
SOT-23
VFB
MCP1661
2x3 TDFN*
1
2
3
5
4
SW
SGND
NC
PGND
NC
1
2
3
4
8
7
6
5 VIN
ENVFB
EP
9
High-Voltage Integrated Switch PWM Boost Regulator with UVLO
MCP1661
DS20005315B-page 2 2014-2015 Microchip Technology Inc.
Typical Applications
V
IN
GND
V
FB
V
OUT
12V, 75 mA-125 mA
C
OUT
4.7-10 μF
C
IN
4.7-10 μF
L
4.7 μH
SW
1.05 M
Ω
120 k
Ω
EN
+
-
ALKALINE
ON
OFF
+
-
ALKALINE
R
TOP
R
BOT
V
IN
2.4V
-3.0V
D
MCP1661
PMEG2005
D
V = 1.227V
FB
V
IN
GND
V
FB
V
OUT
24V, 50 mA-125 mA
C
OUT
10 μF
C
IN
10 μF
L
10 μH
SW
1.05 M
Ω
56 k
Ω
EN
+
-
ALKALINE
+
-
ALKALINE
R
TOP
R
BOT
V
IN
3.0V
- 4.2V
D
MCP1661
MBR0540
D
0
50
100
150
200
250
300
2.4 2.8 3.2 3.6 4 4.4 4.8
I
OUT
(mA)
V
IN
(V)
VOUT
= 12V
VOUT
= 24V
Maximum Output Current vs. VIN
2014-2015 Microchip Technology Inc. DS20005315B-page 3
MCP1661
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VSW – GND .....................................................................+36V
EN, VIN – GND...............................................................+6.0V
VFB .................................................................................+1.3V
Power Dissipation .......................................Internally Limited
Storage Temperature .................................... -65
°C to +150°C
Ambient Temperature with Power Applied .... -40°C to +125°C
Operating Junction Temperature................... -40°C to +150°C
ESD Protection On All Pins:
HBM................................................................. 4 kV
MM..................................................................300V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA= +25°C, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic, L = 4.7 µH.
Boldface specifications apply over the controlled T
A range of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Input Voltage Range VIN 2.4 — 5.5 V Note 1
Undervoltage Lockout
(UVLO)
UVLOSTART — 2.3 — V VIN rising,
IOUT = 1 mA resistive load
UVLOSTOP — 1.85 — V V IN falling,
IOUT = 1 mA resistive load
Output Voltage Adjust Range VOUT — — 32 V Note 1
Maximum Output Current IOUT — 125 — mA 3.3V VIN, 12V VOUT
200 — mA 5.0V VIN, 12V VOUT
100 — mA 4.2V VIN, 24V VOUT
Feedback Voltage VFB 1.190 1.227 1.264 V
VFB Accuracy -3 — 3 %
Feedback Input Bias Current I
VFB — 0.005 — µA
No Load Input Current IIN0 — 250 — µA Device switching, no load,
3.3V VIN, 12V VOUT (Note 2)
Shutdown Quiescent Current IQSHDN — 200 — nA EN = GND,
feedback divider current not
included (Note 3)
Peak Switch Current Limit IN(MAX) — 1.3 — A Note 4
NMOS Switch Leakage INLK — 0.4 — µA V IN = VSW = 5V; VOUT = 5.5V
VEN = VFB = GND
NMOS Switch ON Resistance RDS(ON) — 0.8 — VIN = 5V, VOUT = 12V,
IOUT = 100 mA (Note 4)
Note 1: Minimum input voltage in the range of VIN
(VIN < 5.5V < VOUT) depends on the maximum duty cycle
(DCMAX) and on the output voltage (VOUT
), according to the boost converter equation:
VINmin = VOUT x (1 – DCMAX).
2: IIN0
varies with input and output voltage (Figure 2-8). IIN0 is measured on the VIN
pin when the device is
switching (EN = VIN), at no load, with RTOP = 120 k and RBOT = 1.05 M.
3: IQSHDN is measured on the V
IN pin when the device is not switching (EN = GND), at no load, with the
feedback resistors (RTOP + RBOT ) disconnected from VOUT.
4: Determined by characterization, not production tested.
Produktspezifikationen
| Marke: | Microchip |
| Kategorie: | Nicht kategorisiert |
| Modell: | MCP1661 |
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