Texas Instruments LMG3422R030 Bedienungsanleitung

Lies die bedienungsanleitung für Texas Instruments LMG3422R030 (59 Seiten) kostenlos online; sie gehört zur Kategorie Nicht kategorisiert. Dieses Handbuch wurde von 2 Personen als hilfreich bewertet und erhielt im Schnitt 4.3 Sterne aus 4 Bewertungen. Hast du eine Frage zu Texas Instruments LMG3422R030 oder möchtest du andere Nutzer dieses Produkts befragen? Stelle eine Frage

LMG342xR030 600V 30mΩ GaN FET With Integrated Driver, Protection, and

Temperature Reporting

1 Features

•Qualified for JEDEC JEP180 for hard-switching

topologies

•600V GaN-on-Si FET with integrated gate driver

–Integrated high precision gate bias voltage

–200V/ns FET hold-off

–2.2MHz switching frequency

–20V/ns to 150V/ns slew rate for optimization of

switching performance and EMI mitigation

–Operates from 7.5V to 18V supply

•Robust protection

–Cycle-by-cycle overcurrent and latched short-

circuit protection with < 100ns response

–Withstands 720V surge while hard-switching

–Self-protection from internal overtemperature

and UVLO monitoring

•Advanced power management

–Digital temperature PWM output

–LMG3426R030 includes zero-voltage detection

(ZVD) feature that facilitates soft-switching

converters

–LMG3427R030 includes zero-current detection

(ZCD) feature that facilitates soft-switching

converters

2 Applications

•Switch-mode power converters

•Merchant network and server PSU

•Merchant telecom rectifiers

•Solar inverters and industrial motor drives

•Uninterruptible power supplies

OCP, SCP,

OTP, UVLO

VDD

LDO5V

IN

RDRV

Current

Direct-Drive

Slew

Rate

LDO,

BB

GaN

DRAIN

SOURCE

SOURCE

VNEG

OC or ZVD or ZCD

FAULT

TEMP

Simplified Block Diagram

3 Description

The LMG342xR030 GaN FET with integrated driver

and protection is targeted at switch-mode power

converters and enables designers to achieve new

levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that

enables switching speed up to 150V/ns. TI’s

integrated precision gate bias results in higher

switching SOA compared to discrete silicon gate

drivers. This integration, combined with TI's low-

inductance package, delivers clean switching and

minimal ringing in hard-switching power supply

topologies. Adjustable gate drive strength allows

control of the slew rate from 20V/ns to 150V/ns,

which can be used to actively control EMI and

optimize switching performance. The LMG3426R030

includes the zero-voltage detection (ZVD) feature

which provides a pulse output from the ZVD pin when

zero-voltage switching is realized. The LMG3427R030

includes the zero-current detection (ZCD) feature

which provides a pulse output from the ZCD pin when

a positive drain-to-source current is detected .

Advanced power management features include

digital temperature reporting and fault detection.

The temperature of the GaN FET is reported

through a variable duty cycle PWM output, which

simplifies managing device loading. Faults reported

include overcurrent, short-circuit, overtemperature,

VDD UVLO, and high-impedance RDRV pin.

Package Information

PART NUMBERPACKAGE

(1)

PACKAGE SIZE

(2)

LMG3422R030

RQZ (VQFN, 54)12.00mm × 12.00mmLMG3426R030

LMG3427R030

(1)For more information, see the Mechanical, Packaging, and

Orderable Informationsection.

(2)The package size (length × width) is a nominal value and

includes pins, where applicable.

Device Information

PART NUMBER

ZERO-VOLTAGE

DETECTION

FEATURE

ZERO-CURRENT

DETECTION

FEATURE

LMG3422R030——

LMG3426R030Yes—

LMG3427R030—Yes

LMG3422R030, LMG3426R030, LMG3427R030

SNOSDA7F – SEPTEMBER 2020 – REVISED AUGUST 2024

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

Produktspezifikationen