Texas Instruments CSD17551Q3A Bedienungsanleitung
Seiten 12 Nicht kategorisiert
Lies die Bedienungsanleitung für Texas Instruments CSD17551Q3A kostenlos online oder lade das PDF herunter. Diese Anleitung wurde 15 Mal aufgerufen. Frage zu diesem Modell? Stelle eine Frage

0
2
4
6
8
10
12
14
16
18
20
22
24
26
024681012
V
GS
- Gate-to- Source Voltage (V)
R
DS(on)
- On-State Resistance (mΩ)
T
C
= 25°C Id = 11A
T
C
= 125ºC Id = 11A
G001
0
2
4
6
8
10
03691215
Q
g
- Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 11A
V
DS
=15V
G001
1
D
2
D
3
D
4
D
D
5
G
6S
7
S
8S
P0093-01
Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
Reference
Design
CSD17551Q3A
SLPS386B–SEPTEMBER2012–REVISEDJANUARY2016
CSD17551Q3A30-VN-ChannelNexFET™PowerMOSFETs
1Features
ProductSummary
1
•Ultra-LowQ
g
andQ
gd
T
A
=25°CTYPICALVALUEUNIT
•LowThermalResistance
V
DS
Drain-to-SourceVoltage30V
•AvalancheRated
Q
g
GateChargeTotal(4.5V)6.0nC
Q
gd
GateChargeGate-to-Drain1.5nC
•PbFree
V
GS
=4.5V9.6mΩ
•RoHSCompliant
R
DS(on)
Drain-to-SourceOnResistance
V
GS
=10V7.8mΩ
•HalogenFree
V
GS(th)
ThresholdVoltage1.6V
•SON3.3mm×3.3mmPlasticPackage
OrderingInformation
(1)
2Applications
DEVICEQTYMEDIAPACKAGESHIP
•Point-of-LoadSynchronousBuckinNetworking,
CSD17551Q3A250013-InchReelSON
Tapeand
3.3mm×3.3mm
Telecom,andComputingSystems
Reel
CSD17551Q3AT2507-InchReel
PlasticPackage
•OptimizedforControlFETApplications
(1)Forallavailablepackages,seetheorderableaddendumat
theendofthedatasheet.
3Description
This30V,7.8mΩ,3.3mm×3.3mmNexFET™
AbsoluteMaximumRatings
powerMOSFETisdesignedtominimizelossesin
T
A
=25°CunlessotherwisestatedVALUEUNIT
powerconversionapplications.
V
DS
Drain-to-SourceVoltage30V
V
GS
Gate-to-SourceVoltage±20V
TopView
ContinuousDrainCurrent,T
C
=25°C48A
I
D
ContinuousDrainCurrent,SiliconLimited48A
ContinuousDrainCurrent,T
A
=25°C
(1)
12A
I
DM
PulsedDrainCurrent,T
A
=25°C
(2)
71A
P
D
PowerDissipation
(1)
2.6W
T
J
,OperatingJunctionTemperature,
–55to150°C
T
stg
StorageTemperature
AvalancheEnergy,singlepulse
E
AS
31mJ
I
D
=25A,L=0.1mH,R
G
=25Ω
(1)TypicalR
θJA
=48°C/Wona1inch
2
(6.45cm
2
),
SPACE2oz.(0.071mmthick)Cupadona0.06inch(1.52mm)thick
FR4PCB.
SPACE
(2)Pulseduration≤300μs,dutycycle≤2%
R
DS(on)
vsV
GS
GateCharge
1
AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,
intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.
Produktspezifikationen
| Marke: | Texas Instruments |
| Kategorie: | Nicht kategorisiert |
| Modell: | CSD17551Q3A |
Brauchst du Hilfe?
Wenn Sie Hilfe mit Texas Instruments CSD17551Q3A benötigen, stellen Sie unten eine Frage und andere Benutzer werden Ihnen antworten